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制造商: Toshiba 产品种类: MOSFET RoHS: 详细信息 技术: Si 安装风格: Through Hole 封装 / 箱体: TO-220-3 晶体管极性: N-Channel 通道数量: 1 Channel Vds-漏源极击穿电压: 900 V Id-连续漏极电流: 7 A Rds On-漏源导通电阻: 1.6 Ohms Vgs - 栅极-源极电压: - 30 V, + 30 ...